Conference
Design and control of interface reaction between Al-based dielectrics and AlGaN layer for hysteresis-free AlGaN/GaN MOS-HFETs
| Τίτλος: | Design and control of interface reaction between Al-based dielectrics and AlGaN layer for hysteresis-free AlGaN/GaN MOS-HFETs |
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| Συγγραφείς: | Watanabe, K., Nozaki, M., Yamada, T., Nakazawa, S., Anda, Y., Isliida, M., Ueda, T., Yoshigoe, A., Hosoi, T., Shimura, T., Watanabe, H. |
| Πηγή: | 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) Power Semiconductor Devices and IC's (ISPSD), 2017 29th International Symposium on. :219-222 May, 2017 |
| Relation: | 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) |
| Βάση Δεδομένων: | IEEE Xplore Digital Library |
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