Watanabe, K., Nozaki, M., Yamada, T., Nakazawa, S., Anda, Y., Isliida, M., . . . Watanabe, H. (2017). Design and control of interface reaction between Al-based dielectrics and AlGaN layer for hysteresis-free AlGaN/GaN MOS-HFETs. 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD), Power Semiconductor Devices and IC's (ISPSD), 2017 29th International Symposium on, 219. https://doi.org/10.23919/ISPSD.2017.7988927
Παραπομπή σε μορφή Chicago (17η εκδ.)Watanabe, K., et al. "Design and Control of Interface Reaction Between Al-based Dielectrics and AlGaN Layer for Hysteresis-free AlGaN/GaN MOS-HFETs." 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD), Power Semiconductor Devices and IC's (ISPSD), 2017 29th International Symposium on 2017: 219. https://doi.org/10.23919/ISPSD.2017.7988927.
Παραπομπή σε μορφή MLA (9th εκδ.)Watanabe, K., et al. "Design and Control of Interface Reaction Between Al-based Dielectrics and AlGaN Layer for Hysteresis-free AlGaN/GaN MOS-HFETs." 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD), Power Semiconductor Devices and IC's (ISPSD), 2017 29th International Symposium on, 2017, p. 219, https://doi.org/10.23919/ISPSD.2017.7988927.