Conference
Electrical property and reliability of quasi-double SOI MOSFET
| Τίτλος: | Electrical property and reliability of quasi-double SOI MOSFET |
|---|---|
| Συγγραφείς: | Mao, Guang, Xie, Lei, Ren, Shangqing, Yang, Renhua, Liu, Xin, Zhong, Le, Lv, Qiuye, Peng, Yong |
| Πηγή: | 2016 International Conference on Integrated Circuits and Microsystems (ICICM) Integrated Circuits and Microsystems (ICICM), International Conference on. :191-194 Nov, 2016 |
| Relation: | 2016 International Conference on Integrated Circuits and Microsystems (ICICM) |
| Βάση Δεδομένων: | IEEE Xplore Digital Library |
| FullText | Text: Availability: 0 |
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| Header | DbId: edseee DbLabel: IEEE Xplore Digital Library An: edseee.7813590 RelevancyScore: 984 AccessLevel: 2 PubType: Conference PubTypeId: conference PreciseRelevancyScore: 983.610473632813 |
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| Items | – Name: Title Label: Title Group: Ti Data: Electrical property and reliability of quasi-double SOI MOSFET – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Mao%2C+Guang%22">Mao, Guang</searchLink><br /><searchLink fieldCode="AR" term="%22Xie%2C+Lei%22">Xie, Lei</searchLink><br /><searchLink fieldCode="AR" term="%22Ren%2C+Shangqing%22">Ren, Shangqing</searchLink><br /><searchLink fieldCode="AR" term="%22Yang%2C+Renhua%22">Yang, Renhua</searchLink><br /><searchLink fieldCode="AR" term="%22Liu%2C+Xin%22">Liu, Xin</searchLink><br /><searchLink fieldCode="AR" term="%22Zhong%2C+Le%22">Zhong, Le</searchLink><br /><searchLink fieldCode="AR" term="%22Lv%2C+Qiuye%22">Lv, Qiuye</searchLink><br /><searchLink fieldCode="AR" term="%22Peng%2C+Yong%22">Peng, Yong</searchLink> – Name: TitleSource Label: Source Group: Src Data: 2016 International Conference on Integrated Circuits and Microsystems (ICICM) Integrated Circuits and Microsystems (ICICM), International Conference on. :191-194 Nov, 2016 – Name: NoteTitleSource Label: Relation Group: SrcInfo Data: 2016 International Conference on Integrated Circuits and Microsystems (ICICM) |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=edseee&AN=edseee.7813590 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1109/ICAM.2016.7813590 PhysicalDescription: Pagination: PageCount: 4 StartPage: 191 Titles: – TitleFull: Electrical property and reliability of quasi-double SOI MOSFET Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Mao, Guang – PersonEntity: Name: NameFull: Xie, Lei – PersonEntity: Name: NameFull: Ren, Shangqing – PersonEntity: Name: NameFull: Yang, Renhua – PersonEntity: Name: NameFull: Liu, Xin – PersonEntity: Name: NameFull: Zhong, Le – PersonEntity: Name: NameFull: Lv, Qiuye – PersonEntity: Name: NameFull: Peng, Yong IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 11 Type: published Y: 2016 Identifiers: – Type: isbn-print Value: 9781509028139 – Type: isbn-print Value: 9781509028146 – Type: issn-locals Value: edseee.IEEEConferenc Titles: – TitleFull: 2016 International Conference on Integrated Circuits and Microsystems (ICICM), Integrated Circuits and Microsystems (ICICM), International Conference on Type: main |
| ResultId | 1 |