Academic Journal
Enhancing HfO2-Based Si Channel FeFET Retention by Tunneling Barrier Engineering: Inserting Al2O3 Layers to Increase Tunneling Barrier
| Τίτλος: | Enhancing HfO2-Based Si Channel FeFET Retention by Tunneling Barrier Engineering: Inserting Al2O3 Layers to Increase Tunneling Barrier |
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| Συγγραφείς: | Chen, Z., Hu, T., Jia, X., Ji, R., Han, R., Bai, M., Zhou, Y., Zhu, R., Sun, X., Ke, X., Chai, J., Xu, H., Han, K., Tang, K., Wang, X., Wang, W., Ye, T. |
| Πηγή: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 73(7):4162-4168 Jul, 2026 |
| Βάση Δεδομένων: | IEEE Xplore Digital Library |
| ISSN: | 00189383 15579646 |
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| DOI: | 10.1109/TED.2026.3697708 |