Design Tradeoffs of Through-Silicon-Carbide Vias for High-Temperature 3D SiC IC Integration

Λεπτομέρειες βιβλιογραφικής εγγραφής
Τίτλος: Design Tradeoffs of Through-Silicon-Carbide Vias for High-Temperature 3D SiC IC Integration
Συγγραφείς: Thota, Sahithi, Song, Li, Li, Feng
Πηγή: 2026 IEEE Workshop on Microelectronics and Electron Devices (WMED) Microelectronics and Electron Devices (WMED), 2026 IEEE Workshop on. :10-13 Apr, 2026
Relation: 2026 IEEE Workshop on Microelectronics and Electron Devices (WMED)
Βάση Δεδομένων: IEEE Xplore Digital Library