Conference
Poly-Si Channel-Induced Time Instability of 3D NAND Flash Cell Threshold-Voltage: A Comprehensive Temperature Analysis
| Τίτλος: | Poly-Si Channel-Induced Time Instability of 3D NAND Flash Cell Threshold-Voltage: A Comprehensive Temperature Analysis |
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| Συγγραφείς: | Refaldi, D. G., Malavena, G., Burattini, M., Zerbini, D., Chiavarone, L., Mauri, A. G., Spinelli, A. S., Compagnoni, C. Monzio |
| Πηγή: | 2026 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2026 IEEE International. :1-7 Mar, 2026 |
| Relation: | 2026 IEEE International Reliability Physics Symposium (IRPS) |
| Βάση Δεδομένων: | IEEE Xplore Digital Library |
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