Poly-Si Channel-Induced Time Instability of 3D NAND Flash Cell Threshold-Voltage: A Comprehensive Temperature Analysis

Λεπτομέρειες βιβλιογραφικής εγγραφής
Τίτλος:	Poly-Si Channel-Induced Time Instability of 3D NAND Flash Cell Threshold-Voltage: A Comprehensive Temperature Analysis
Συγγραφείς:	Refaldi, D. G., Malavena, G., Burattini, M., Zerbini, D., Chiavarone, L., Mauri, A. G., Spinelli, A. S., Compagnoni, C. Monzio
Πηγή:	2026 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2026 IEEE International. :1-7 Mar, 2026
Relation:	2026 IEEE International Reliability Physics Symposium (IRPS)
Βάση Δεδομένων:	IEEE Xplore Digital Library