Refaldi, D. G., Malavena, G., Burattini, M., Zerbini, D., Chiavarone, L., Mauri, A. G., . . . Compagnoni, C. M. (2026). Poly-Si Channel-Induced Time Instability of 3D NAND Flash Cell Threshold-Voltage: A Comprehensive Temperature Analysis. 2026 IEEE International Reliability Physics Symposium (IRPS), Reliability Physics Symposium (IRPS), 2026 IEEE International, 1. https://doi.org/10.1109/IRPS61424.2026.11499358
Παραπομπή σε μορφή Chicago (17η εκδ.)Refaldi, D. G., G. Malavena, M. Burattini, D. Zerbini, L. Chiavarone, A. G. Mauri, A. S. Spinelli, και C. Monzio Compagnoni. "Poly-Si Channel-Induced Time Instability of 3D NAND Flash Cell Threshold-Voltage: A Comprehensive Temperature Analysis." 2026 IEEE International Reliability Physics Symposium (IRPS), Reliability Physics Symposium (IRPS), 2026 IEEE International 2026: 1. https://doi.org/10.1109/IRPS61424.2026.11499358.
Παραπομπή σε μορφή MLA (9th εκδ.)Refaldi, D. G., et al. "Poly-Si Channel-Induced Time Instability of 3D NAND Flash Cell Threshold-Voltage: A Comprehensive Temperature Analysis." 2026 IEEE International Reliability Physics Symposium (IRPS), Reliability Physics Symposium (IRPS), 2026 IEEE International, 2026, p. 1, https://doi.org/10.1109/IRPS61424.2026.11499358.