Conference

Improved Electrical Stress Reliability and Breakdown in MoS2 FETs by Se-Alloying

Bibliographic Details
Title: Improved Electrical Stress Reliability and Breakdown in MoS2 FETs by Se-Alloying
Authors: Dar, Aadil Bashir, Andrabi, S Tehmeena, Yadav, Megha, Shah, Asif A, Rai, Anand K, B M, R Archana, Verma, Rupali, Patbhaje, Utpreksh, Shrivastava, Mayank
Source: 2026 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2026 IEEE International. :1-4 Mar, 2026
Relation: 2026 IEEE International Reliability Physics Symposium (IRPS)
Database: IEEE Xplore Digital Library
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