Improved Electrical Stress Reliability and Breakdown in MoS2 FETs by Se-Alloying

Λεπτομέρειες βιβλιογραφικής εγγραφής
Τίτλος:	Improved Electrical Stress Reliability and Breakdown in MoS2 FETs by Se-Alloying
Συγγραφείς:	Dar, Aadil Bashir, Andrabi, S Tehmeena, Yadav, Megha, Shah, Asif A, Rai, Anand K, B M, R Archana, Verma, Rupali, Patbhaje, Utpreksh, Shrivastava, Mayank
Πηγή:	2026 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2026 IEEE International. :1-4 Mar, 2026
Relation:	2026 IEEE International Reliability Physics Symposium (IRPS)
Βάση Δεδομένων:	IEEE Xplore Digital Library