APA (7th ed.) Citation

Dar, A. B., Andrabi, S. T., Yadav, M., Shah, A. A., Rai, A. K., B M, R. A., . . . Shrivastava, M. (2026). Improved Electrical Stress Reliability and Breakdown in MoS2 FETs by Se-Alloying. 2026 IEEE International Reliability Physics Symposium (IRPS), Reliability Physics Symposium (IRPS), 2026 IEEE International, 1. https://doi.org/10.1109/IRPS61424.2026.11499210

Chicago Style (17th ed.) Citation

Dar, Aadil Bashir, S Tehmeena Andrabi, Megha Yadav, Asif A. Shah, Anand K. Rai, R Archana B M, Rupali Verma, Utpreksh Patbhaje, and Mayank Shrivastava. "Improved Electrical Stress Reliability and Breakdown in MoS2 FETs by Se-Alloying." 2026 IEEE International Reliability Physics Symposium (IRPS), Reliability Physics Symposium (IRPS), 2026 IEEE International 2026: 1. https://doi.org/10.1109/IRPS61424.2026.11499210.

MLA (9th ed.) Citation

Dar, Aadil Bashir, et al. "Improved Electrical Stress Reliability and Breakdown in MoS2 FETs by Se-Alloying." 2026 IEEE International Reliability Physics Symposium (IRPS), Reliability Physics Symposium (IRPS), 2026 IEEE International, 2026, p. 1, https://doi.org/10.1109/IRPS61424.2026.11499210.