Eisner, S., Heussen, Z., Cordero, S., Niroula, J., Naphy, J., Isamotu, M., . . . Senesky, D. (2025). Degradation Analysis of InAlN/GaN Transistors Under Simulated Venus Surface Conditions. IEEE Transactions on Electron Devices, Electron Devices, IEEE Transactions on, IEEE Trans. Electron Devices, 72(12), 6610. https://doi.org/10.1109/TED.2025.3625950
Παραπομπή σε μορφή Chicago (17η εκδ.)Eisner, S.R, et al. "Degradation Analysis of InAlN/GaN Transistors Under Simulated Venus Surface Conditions." IEEE Transactions on Electron Devices, Electron Devices, IEEE Transactions on, IEEE Trans. Electron Devices 72, no. 12 (2025): 6610. https://doi.org/10.1109/TED.2025.3625950.
Παραπομπή σε μορφή MLA (9th εκδ.)Eisner, S.R, et al. "Degradation Analysis of InAlN/GaN Transistors Under Simulated Venus Surface Conditions." IEEE Transactions on Electron Devices, Electron Devices, IEEE Transactions on, IEEE Trans. Electron Devices, vol. 72, no. 12, 2025, p. 6610, https://doi.org/10.1109/TED.2025.3625950.