Academic Journal

Degradation Analysis of InAlN/GaN Transistors Under Simulated Venus Surface Conditions

Bibliographic Details
Title: Degradation Analysis of InAlN/GaN Transistors Under Simulated Venus Surface Conditions
Authors: Eisner, S.R., Heussen, Z.N., Cordero, S., Niroula, J., Naphy, J., Isamotu, M.F., Surdi, H., Yuan, M., Xie, Q., Nemanich, R.J., Palacios, T., Rais-Zadeh, M., Hunter, G.W., Senesky, D.G.
Source: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 72(12):6610-6617 Dec, 2025
Database: IEEE Xplore Digital Library
Description
ISSN:00189383
15579646
DOI:10.1109/TED.2025.3625950