Kwon, O., Lee, S., Seo, J., Han, G., Kim, D., Park, S., . . . Hwang, H. (2025). Low-Temperature NiSi Formation via Microwave Annealing for Stable Metal-Induced Lateral Crystallization in 3D NAND Flash Memory. 2025 Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), VLSI Technology and Circuits (VLSI Technology and Circuits), 2025 Symposium on, 1. https://doi.org/10.23919/VLSITechnologyandCir65189.2025.11075197
Παραπομπή σε μορφή Chicago (17η εκδ.)Kwon, Ohhyuk, et al. "Low-Temperature NiSi Formation via Microwave Annealing for Stable Metal-Induced Lateral Crystallization in 3D NAND Flash Memory." 2025 Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), VLSI Technology and Circuits (VLSI Technology and Circuits), 2025 Symposium on 2025: 1. https://doi.org/10.23919/VLSITechnologyandCir65189.2025.11075197.
Παραπομπή σε μορφή MLA (9th εκδ.)Kwon, Ohhyuk, et al. "Low-Temperature NiSi Formation via Microwave Annealing for Stable Metal-Induced Lateral Crystallization in 3D NAND Flash Memory." 2025 Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), VLSI Technology and Circuits (VLSI Technology and Circuits), 2025 Symposium on, 2025, p. 1, https://doi.org/10.23919/VLSITechnologyandCir65189.2025.11075197.