Academic Journal
Optimization of a 3-micron BCCD process for high density CCD registers
| Title: | Optimization of a 3-micron BCCD process for high density CCD registers |
|---|---|
| Authors: | Ratner, Mark |
| Source: | Theses |
| Publisher Information: | Digital Commons @ NJIT |
| Publication Year: | 1992 |
| Collection: | Digital Commons @ New Jersey Institute of Technology (NJIT) |
| Subject Terms: | Charge coupled devices -- Computer simulation, Mathematical optimization -- Computer programs, Electrical and Electronics |
| Description: | In July 1991, Dr. Walter F. Kosonocky proposed a High-Frame-Rate-CCD Imager. The design of the imager is such that the CCD channel width be 3-microns and capable of handling at least 3000 - 5000 electrons per square micron. Using process (SUPREM III) and device (PISCES IIB) simulations, charge handling capacities as a function of implant energy and junction depth were studied. Arsenic implants ranging from 100 to 200keV were driven-in to obtain junction depths between 0.40µm and 0.80µm. As a result of this work it was determined that charge handling capacities as high as 9400 electrons/µm2 were achievable with implanted doses of 1.6E12 ions/cm2. This thesis is a description of the simulation and analysis techniques used to optimize the charge handhng capacity of a 31.1m wide BCCD channel. |
| Document Type: | text |
| File Description: | application/pdf |
| Language: | unknown |
| Relation: | https://digitalcommons.njit.edu/theses/2337; https://digitalcommons.njit.edu/context/theses/article/3351/viewcontent/njit_etd1992_106.pdf |
| Availability: | https://digitalcommons.njit.edu/theses/2337 https://digitalcommons.njit.edu/context/theses/article/3351/viewcontent/njit_etd1992_106.pdf |
| Accession Number: | edsbas.F9C654B1 |
| Database: | BASE |
| Description not available. |