Λεπτομέρειες βιβλιογραφικής εγγραφής
| Τίτλος: |
Strain-induced anodization of SiGe/Si multiple layers to form high density SiGe/Si heterogeneous nanorods |
| Συγγραφείς: |
Zhou B, Pan SW, Chen R, Chen SY, Li C, Lai HK, Yu, JZ, Zhu XF, Chen, SY, Xiamen Univ, Semicond Photon Res Ctr, Xiamen 361005, Peoples R China. E-mail Address: sychen@xmu.edu.cn |
| Έτος έκδοσης: |
2009 |
| Συλλογή: |
Institute of Semiconductors: SEMI OpenIR (Chinese Academy of Sciences) / 中国科学院半导体研究所机构知识库 |
| Θεματικοί όροι: |
Strain-induced, Electrochemical Anodization, Silicon Germanium, Heterogeneous Nanostructures, Porous Silicon Layer, Visible Photoluminescence, Surface-morphology, Thin-films, Si, Germanium, Superlattices, Nanocrystals, Relaxation, Growth, 光电子学, surface contamination, thin films, metric system, silicon, metallic superlattices, development, 表面重构, surface morphology, surface reconstruction, films, thin, solid film, dielectric thin films, epitaxial layers, high-k dielectric thin films |
| Περιγραφή: |
SiGe/Si heterogeneous nanostructures are prepared by electrochemical anodization of SiGe/Si multiple layers grown by ultra-high vacuum chemical vapor deposition. Nanorods with densities up to similar to 2 x 10(11) cm(-2) have been observed with a relatively uniform distribution confirmed by scanning electron microscope images of both top and cross-sectional views. The samples show visible photoluminescence with multiple peaks and narrow widths which is related to the interference effect. Finally, a model is proposed to explain the role of strain during the anodization of SiGe/Si multiple layers. (C) 2009 Elsevier Ltd. All rights reserved. |
| Τύπος εγγράφου: |
report |
| Γλώσσα: |
English |
| Relation: |
SOLID STATE COMMUNICATIONS; Zhou B, Pan SW, Chen R, Chen SY, Li C, Lai HK, Yu, JZ, Zhu XF.Strain-induced anodization of SiGe/Si multiple layers to form high density SiGe/Si heterogeneous nanorods.SOLID STATE COMMUNICATIONS,2009,149(43-44):1897-1901; http://ir.semi.ac.cn/handle/172111/10199 |
| Διαθεσιμότητα: |
http://ir.semi.ac.cn/handle/172111/10199 |
| Αριθμός Καταχώρησης: |
edsbas.923C4162 |
| Βάση Δεδομένων: |
BASE |