Λεπτομέρειες βιβλιογραφικής εγγραφής
| Τίτλος: |
Photoluminescence from heterogeneous SiGe/Si nanostructures prepared via a two-step approach strategy |
| Συγγραφείς: |
Zhou B, Pan SW, Chen SY, Li C, Lai HK, Yu JZ, Zhu XF, Chen SY Xiamen Univ Dept Phys Semicond Photon Res Ctr Xiamen 361005 Fujain Peoples R China. E-mail Address: sychen@xmu.edu.cn |
| Έτος έκδοσης: |
2009 |
| Συλλογή: |
Institute of Semiconductors: SEMI OpenIR (Chinese Academy of Sciences) / 中国科学院半导体研究所机构知识库 |
| Θεματικοί όροι: |
Heterostructure, Nanostructure, Porous Si, Porous Sige, Photoluminescence, 光电子学, 光致发光 |
| Περιγραφή: |
A two-step approach of preparation for SiGe/Si heterogeneous nanostructures, which combined with ultra-high vacuum chemical deposition and electrochemical anodization techniques, is demonstrated. Uniformly distributed nanostructures with a quite uniform distribution of size and morphology are obtained. A strong room-temperature photoluminescence from the nanostructures was observed with a narrow full-width at half-maximum of around 110 meV. The possible origins of the two main peaks at around 1.6 and 1.8 eV have been discussed in detail. The two-step approach is proved to be a promising method to fabricate new Si-based optoelectronic materials. (C) 2009 Elsevier B.V. All rights reserved. |
| Τύπος εγγράφου: |
report |
| Γλώσσα: |
English |
| Relation: |
JOURNAL OF LUMINESCENCE; Zhou B; Pan SW; Chen SY; Li C; Lai HK; Yu JZ; Zhu XF .Photoluminescence from heterogeneous SiGe/Si nanostructures prepared via a two-step approach strategy ,JOURNAL OF LUMINESCENCE,2009 ,129(9):1073-1077; http://ir.semi.ac.cn/handle/172111/7047 |
| Διαθεσιμότητα: |
http://ir.semi.ac.cn/handle/172111/7047 |
| Αριθμός Καταχώρησης: |
edsbas.5E010F4D |
| Βάση Δεδομένων: |
BASE |