Academic Journal
Photoluminescence from heterogeneous SiGe/Si nanostructures prepared via a two-step approach strategy
| Τίτλος: | Photoluminescence from heterogeneous SiGe/Si nanostructures prepared via a two-step approach strategy |
|---|---|
| Συγγραφείς: | Zhou, B, Pan, SW, Chen, SY, Li, C, Lai, HK, Yu, JZ, Zhu, XF, 李成 |
| Πηγή: | http://dx.doi.org/10.1016/j.jlumin.2009.04.033. |
| Έτος έκδοσης: | 2009 |
| Συλλογή: | Xiamen University Institutional Repository |
| Θεματικοί όροι: | SILICON THIN-FILMS, VISIBLE PHOTOLUMINESCENCE, POROUS SI1-XGEX, QUANTUM CONFINEMENT, SI, NANOCRYSTALS, DEFECTS, GROWTH, WELLS |
| Περιγραφή: | Nation Natural Science Foundation of China [50672079, 60676027, 60837001]; National Basic Research Program of China (973 Program) [2007CB613404]; MOST International Sci & Tech Cooperation and Exchange Special Fund [2008DFA51230] ; A two-step approach of preparation for SiGe/Si heterogeneous nanostructures, which combined with ultra-high vacuum chemical deposition and electrochemical anodization techniques, is demonstrated. Uniformly distributed nanostructures with a quite uniform distribution of size and morphology are obtained. A strong room-temperature photoluminescence from the nanostructures was observed with a narrow full-width at half-maximum of around 110 meV. The possible origins of the two main peaks at around 1.6 and 1.8 eV have been discussed in detail. The two-step approach is proved to be a promising method to fabricate new Si-based optoelectronic materials. (C) 2009 Elsevier B.V. All rights reserved. |
| Τύπος εγγράφου: | article in journal/newspaper |
| Γλώσσα: | English |
| ISSN: | 0022-2313 |
| Relation: | Journal of Luminescence, 2009,129(9):1073-1077; WOS:000268555700035; http://dspace.xmu.edu.cn/handle/2288/69515 |
| Διαθεσιμότητα: | http://dspace.xmu.edu.cn/handle/2288/69515 |
| Αριθμός Καταχώρησης: | edsbas.51BA7855 |
| Βάση Δεδομένων: | BASE |
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