Λεπτομέρειες βιβλιογραφικής εγγραφής
| Τίτλος: |
Photoluminescence from heterogeneous SiGe/Si nanostructures prepared via a two-step approach strategy |
| Συγγραφείς: |
Zhou, B, Pan, SW, Chen, SY, Li, C, Lai, HK, Yu, JZ, Zhu, XF, 李成 |
| Πηγή: |
http://dx.doi.org/10.1016/j.jlumin.2009.04.033. |
| Έτος έκδοσης: |
2009 |
| Συλλογή: |
Xiamen University Institutional Repository |
| Θεματικοί όροι: |
SILICON THIN-FILMS, VISIBLE PHOTOLUMINESCENCE, POROUS SI1-XGEX, QUANTUM CONFINEMENT, SI, NANOCRYSTALS, DEFECTS, GROWTH, WELLS |
| Περιγραφή: |
Nation Natural Science Foundation of China [50672079, 60676027, 60837001]; National Basic Research Program of China (973 Program) [2007CB613404]; MOST International Sci & Tech Cooperation and Exchange Special Fund [2008DFA51230] ; A two-step approach of preparation for SiGe/Si heterogeneous nanostructures, which combined with ultra-high vacuum chemical deposition and electrochemical anodization techniques, is demonstrated. Uniformly distributed nanostructures with a quite uniform distribution of size and morphology are obtained. A strong room-temperature photoluminescence from the nanostructures was observed with a narrow full-width at half-maximum of around 110 meV. The possible origins of the two main peaks at around 1.6 and 1.8 eV have been discussed in detail. The two-step approach is proved to be a promising method to fabricate new Si-based optoelectronic materials. (C) 2009 Elsevier B.V. All rights reserved. |
| Τύπος εγγράφου: |
article in journal/newspaper |
| Γλώσσα: |
English |
| ISSN: |
0022-2313 |
| Relation: |
Journal of Luminescence, 2009,129(9):1073-1077; WOS:000268555700035; http://dspace.xmu.edu.cn/handle/2288/69515 |
| Διαθεσιμότητα: |
http://dspace.xmu.edu.cn/handle/2288/69515 |
| Αριθμός Καταχώρησης: |
edsbas.51BA7855 |
| Βάση Δεδομένων: |
BASE |