APA (7th ed.) Citation

Verma, M., Singh, A., & Agrawal, S. (2025). An Improved Steep-Slope Triple Metal Gate-Dual Dielectric-GaAs-Pocket-HTFET With Interface Trap Charges Analysis. IEEE Transactions on Device and Materials Reliability, 25, 668-676. https://doi.org/10.1109/tdmr.2025.3595573

Chicago Style (17th ed.) Citation

Verma, Madhulika, Ankita Singh, and Sachin Agrawal. "An Improved Steep-Slope Triple Metal Gate-Dual Dielectric-GaAs-Pocket-HTFET With Interface Trap Charges Analysis." IEEE Transactions on Device and Materials Reliability 25 (2025): 668-676. https://doi.org/10.1109/tdmr.2025.3595573.

MLA (9th ed.) Citation

Verma, Madhulika, et al. "An Improved Steep-Slope Triple Metal Gate-Dual Dielectric-GaAs-Pocket-HTFET With Interface Trap Charges Analysis." IEEE Transactions on Device and Materials Reliability, vol. 25, 2025, pp. 668-676, https://doi.org/10.1109/tdmr.2025.3595573.