Bibliographic Details
| Title: |
Atomistic Modeling and HAADF Investigations of Misfit and Threading Dislocations in GaSb/GaAs Heterostructures for Applications in High Electron Mobility Transistors. |
| Authors: |
Ruterana, Pierre1 pierre.ruterana@ensicaen.fr, Yi Wang1, Jun Chen1, Chauvat, Marie-Pierre1, El Kazzi, S.2, Deplanque, L.2, Wallart, X.2 |
| Source: |
AIP Conference Proceedings. 2014, Vol. 1618, p51-55. 5p. 3 Color Photographs, 3 Diagrams. |
| Subject Terms: |
*Atomic models, *Threads (Computer programs), *Gallium arsenide, *Heterostructures, *Electron mobility, *Molecular dynamics, *Electron microscopy |
| Abstract: |
A detailed investigation on the misfit and threading dislocations at GaSb/GaAs interface has been carried out using molecular dynamics simulation and quantitative electron microscopy techniques. The sources and propagation of misfit dislocations have been elucidated. The nature and formation mechanisms of the misfit dislocations as well as the role of Sb on the stability of the Lomer configuration have been explained. [ABSTRACT FROM AUTHOR] |
| Database: |
Academic Search Index |