Λεπτομέρειες βιβλιογραφικής εγγραφής
| Τίτλος: |
Atomistic Modeling and HAADF Investigations of Misfit and Threading Dislocations in GaSb/GaAs Heterostructures for Applications in High Electron Mobility Transistors. |
| Συγγραφείς: |
Ruterana, Pierre1 pierre.ruterana@ensicaen.fr, Yi Wang1, Jun Chen1, Chauvat, Marie-Pierre1, El Kazzi, S.2, Deplanque, L.2, Wallart, X.2 |
| Πηγή: |
AIP Conference Proceedings. 2014, Vol. 1618, p51-55. 5p. 3 Color Photographs, 3 Diagrams. |
| Θεματικοί όροι: |
*Atomic models, *Threads (Computer programs), *Gallium arsenide, *Heterostructures, *Electron mobility, *Molecular dynamics, *Electron microscopy |
| Περίληψη: |
A detailed investigation on the misfit and threading dislocations at GaSb/GaAs interface has been carried out using molecular dynamics simulation and quantitative electron microscopy techniques. The sources and propagation of misfit dislocations have been elucidated. The nature and formation mechanisms of the misfit dislocations as well as the role of Sb on the stability of the Lomer configuration have been explained. [ABSTRACT FROM AUTHOR] |
| Βάση Δεδομένων: |
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