Λεπτομέρειες βιβλιογραφικής εγγραφής
| Τίτλος: |
Demonstration of 500 °C RF performance in AlGaN/GaN MISHEMTs with Pt/Au gates. |
| Συγγραφείς: |
Bai, Ruixin1 (AUTHOR) rbai33@wisc.edu, Sarker, Biddut K2 (AUTHOR), Duncan, Leonard A2 (AUTHOR), Mukhopadhyay, Swarnav1 (AUTHOR), Chen, Jiahao1 (AUTHOR), Li, Chenglong1 (AUTHOR), Pasayat, Shubhra S1 (AUTHOR), Green, Andrew J3 (AUTHOR), Islam, Ahmad E3 (AUTHOR), Gupta, Chirag1 (AUTHOR) |
| Πηγή: |
Semiconductor Science & Technology. 2026, Vol. 41 Issue 10, p1-8. 8p. |
| Θεματικοί όροι: |
*High temperature electronics, *Modulation-doped field-effect transistors, *Frequencies of oscillating systems, *Thermal stability |
| Περίληψη: |
In this letter, we demonstrate radio frequency (RF) performance of AlGaN/GaN MISHEMTs with Pt/Au gate up to 500 °C, which is the first report of RF operation at 500 °C using a refractory gate metal. The device achieves 1.08 A mm−1, f t of 42.9 GHz, and f max of 82.4 GHz at room temperature, and retains 0.6 A mm−1, f t of 21 GHz, and f max of 33.5 GHz at 500 °C. The gate bias for peak f t remains nearly unchanged with temperature, indicating stable RF threshold behavior. These results demonstrate robust high-temperature operation enabled by Pt gate and highlight their potential for extreme-environment RF applications. [ABSTRACT FROM AUTHOR] |
| Βάση Δεδομένων: |
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