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Exceptional Ductility in N‐Type Bi2Te3 Enabled by Atomic‐Scale Coulomb Tailoring of the Van Der Waals Gap.

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Title: Exceptional Ductility in N‐Type Bi2Te3 Enabled by Atomic‐Scale Coulomb Tailoring of the Van Der Waals Gap.
Authors: Zhou, Chuan‐Dong1,2 (AUTHOR), Zhang, Qiang1,3 (AUTHOR), Li, Rui‐Jie1,3 (AUTHOR), Cai, Jian‐Feng1,3 (AUTHOR), Zhang, Zong‐Wei1,3 (AUTHOR), Tan, Xiaojian1,3 (AUTHOR), Wang, Zi‐Yuan4 (AUTHOR), Ge, Zhen‐Hua4 (AUTHOR), Liu, Guo‐Qiang1,3 (AUTHOR) liugq@nimte.ac.cn, Liang, Bo2 (AUTHOR) liangbo@ysu.edu.cn, Jiang, Jun1,3 (AUTHOR) jjun@nimte.ac.cn
Source: Advanced Energy Materials. 9/16/2026, Vol. 16 Issue 35, p1-9. 9p.
Subject Terms: *Material plasticity, *Bismuth telluride, *Semiconductor materials, *Ductility, *Materials science, *Electric conductivity
Abstract: Inorganic semiconductors underpin modern electronics but suffer from their intrinsic brittleness that constrains functional applications. Here, we demonstrate a plasticity engineering strategy for layered semiconductor Bismuth Telluride via atomic‐scale Coulomb tailoring. By establishing long‐range interlayer Coulomb attraction through strategic doping in the van der Waals gap, the brittle Bi2Te3 is successfully transformed into highly deformable semiconductors. Importantly, this strategy preserves the in‐plane electrical transport, which achieves >90% room‐temperature compressive strain while retaining an exceptional peak zT of 1.2 at 350 K. The decoupled nature of interlayer Coulomb interaction and in‐plane covalent bonding enables concurrent plasticity enhancement and electronic property conservation. This work establishes a general design principle, leveraging the decoupling between interlayer and in‐plane interactions, for developing deformable semiconductors without compromising their electronic properties. [ABSTRACT FROM AUTHOR]
Database: Academic Search Index
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  Data: Exceptional Ductility in N‐Type Bi<subscript>2</subscript>Te<subscript>3</subscript> Enabled by Atomic‐Scale Coulomb Tailoring of the Van Der Waals Gap.
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  Data: <searchLink fieldCode="AR" term="%22Zhou%2C+Chuan‐Dong%22">Zhou, Chuan‐Dong</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zhang%2C+Qiang%22">Zhang, Qiang</searchLink><relatesTo>1,3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Li%2C+Rui‐Jie%22">Li, Rui‐Jie</searchLink><relatesTo>1,3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Cai%2C+Jian‐Feng%22">Cai, Jian‐Feng</searchLink><relatesTo>1,3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zhang%2C+Zong‐Wei%22">Zhang, Zong‐Wei</searchLink><relatesTo>1,3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Tan%2C+Xiaojian%22">Tan, Xiaojian</searchLink><relatesTo>1,3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Wang%2C+Zi‐Yuan%22">Wang, Zi‐Yuan</searchLink><relatesTo>4</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Ge%2C+Zhen‐Hua%22">Ge, Zhen‐Hua</searchLink><relatesTo>4</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Liu%2C+Guo‐Qiang%22">Liu, Guo‐Qiang</searchLink><relatesTo>1,3</relatesTo> (AUTHOR)<i> liugq@nimte.ac.cn</i><br /><searchLink fieldCode="AR" term="%22Liang%2C+Bo%22">Liang, Bo</searchLink><relatesTo>2</relatesTo> (AUTHOR)<i> liangbo@ysu.edu.cn</i><br /><searchLink fieldCode="AR" term="%22Jiang%2C+Jun%22">Jiang, Jun</searchLink><relatesTo>1,3</relatesTo> (AUTHOR)<i> jjun@nimte.ac.cn</i>
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  Data: <searchLink fieldCode="JN" term="%22Advanced+Energy+Materials%22">Advanced Energy Materials</searchLink>. 9/16/2026, Vol. 16 Issue 35, p1-9. 9p.
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  Data: *<searchLink fieldCode="DE" term="%22Material+plasticity%22">Material plasticity</searchLink><br />*<searchLink fieldCode="DE" term="%22Bismuth+telluride%22">Bismuth telluride</searchLink><br />*<searchLink fieldCode="DE" term="%22Semiconductor+materials%22">Semiconductor materials</searchLink><br />*<searchLink fieldCode="DE" term="%22Ductility%22">Ductility</searchLink><br />*<searchLink fieldCode="DE" term="%22Materials+science%22">Materials science</searchLink><br />*<searchLink fieldCode="DE" term="%22Electric+conductivity%22">Electric conductivity</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Inorganic semiconductors underpin modern electronics but suffer from their intrinsic brittleness that constrains functional applications. Here, we demonstrate a plasticity engineering strategy for layered semiconductor Bismuth Telluride via atomic‐scale Coulomb tailoring. By establishing long‐range interlayer Coulomb attraction through strategic doping in the van der Waals gap, the brittle Bi2Te3 is successfully transformed into highly deformable semiconductors. Importantly, this strategy preserves the in‐plane electrical transport, which achieves >90% room‐temperature compressive strain while retaining an exceptional peak zT of 1.2 at 350 K. The decoupled nature of interlayer Coulomb interaction and in‐plane covalent bonding enables concurrent plasticity enhancement and electronic property conservation. This work establishes a general design principle, leveraging the decoupling between interlayer and in‐plane interactions, for developing deformable semiconductors without compromising their electronic properties. [ABSTRACT FROM AUTHOR]
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        Value: 10.1002/aenm.71385
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        Text: English
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        PageCount: 9
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      – SubjectFull: Material plasticity
        Type: general
      – SubjectFull: Bismuth telluride
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      – SubjectFull: Semiconductor materials
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      – SubjectFull: Ductility
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            – D: 16
              M: 09
              Text: 9/16/2026
              Type: published
              Y: 2026
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