Λεπτομέρειες βιβλιογραφικής εγγραφής
| Τίτλος: |
Exceptional Ductility in N‐Type Bi2Te3 Enabled by Atomic‐Scale Coulomb Tailoring of the Van Der Waals Gap. |
| Συγγραφείς: |
Zhou, Chuan‐Dong1,2 (AUTHOR), Zhang, Qiang1,3 (AUTHOR), Li, Rui‐Jie1,3 (AUTHOR), Cai, Jian‐Feng1,3 (AUTHOR), Zhang, Zong‐Wei1,3 (AUTHOR), Tan, Xiaojian1,3 (AUTHOR), Wang, Zi‐Yuan4 (AUTHOR), Ge, Zhen‐Hua4 (AUTHOR), Liu, Guo‐Qiang1,3 (AUTHOR) liugq@nimte.ac.cn, Liang, Bo2 (AUTHOR) liangbo@ysu.edu.cn, Jiang, Jun1,3 (AUTHOR) jjun@nimte.ac.cn |
| Πηγή: |
Advanced Energy Materials. 9/16/2026, Vol. 16 Issue 35, p1-9. 9p. |
| Θεματικοί όροι: |
*Material plasticity, *Bismuth telluride, *Semiconductor materials, *Ductility, *Materials science, *Electric conductivity |
| Περίληψη: |
Inorganic semiconductors underpin modern electronics but suffer from their intrinsic brittleness that constrains functional applications. Here, we demonstrate a plasticity engineering strategy for layered semiconductor Bismuth Telluride via atomic‐scale Coulomb tailoring. By establishing long‐range interlayer Coulomb attraction through strategic doping in the van der Waals gap, the brittle Bi2Te3 is successfully transformed into highly deformable semiconductors. Importantly, this strategy preserves the in‐plane electrical transport, which achieves >90% room‐temperature compressive strain while retaining an exceptional peak zT of 1.2 at 350 K. The decoupled nature of interlayer Coulomb interaction and in‐plane covalent bonding enables concurrent plasticity enhancement and electronic property conservation. This work establishes a general design principle, leveraging the decoupling between interlayer and in‐plane interactions, for developing deformable semiconductors without compromising their electronic properties. [ABSTRACT FROM AUTHOR] |
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