Λεπτομέρειες βιβλιογραφικής εγγραφής
| Τίτλος: |
AlN Transistors for Ultrahightemperature Electronics. |
| Συγγραφείς: |
Hiroki, Masanobu1, Hirama, Kazuyuki2, Taniyasu, Yoshitaka3 |
| Πηγή: |
NTT Technical Review. Jun2026, Vol. 24 Issue 6, p21-26. 6p. |
| Θεματικοί όροι: |
*Aluminum nitride, *High temperature electronics, *High temperatures, *Metal semiconductor field-effect transistors, *Semiconductor materials |
| Περίληψη: |
Aluminum nitride (AlN) is attracting significant attention as a semiconductor material able to operate in ultrahigh-temperature environments. We outline potential applications of high-temperature electronics and highlight the advantages of AlN for such applications. We also describe the development of AlN metal-semiconductor field-effect transistors at NTT, which can operate stably at temperatures as high as 1000°C. These devices exhibit the highest current on/off ratio reported to date for semiconductor transistors operating at such high temperatures, highlighting the strong potential of AlN for electronics in harsh environments. [ABSTRACT FROM AUTHOR] |
| Βάση Δεδομένων: |
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