Κατασκευή μίας γεννήτριας παλμών RF υψηλών συχνοτήτων
The objective of the proposed dissertation is the design and calibration of an RF device producing short pulsed radio waves of very high voltage (RF nanosecond pulser generator) which can be used for research purposes in the field of medicine for the treatment of various types of skin diseases such...
Αποθηκεύτηκε σε:
| Κύριος συγγραφέας: | |
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| Άλλοι συγγραφείς: | |
| Γλώσσα: | el_GR |
| Δημοσίευση: |
2022
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| Θέματα: | |
| Διαθέσιμο Online: | http://hdl.handle.net/11610/23081 |
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| Περίληψη: | The objective of the proposed dissertation is the design and calibration of an RF device producing short pulsed radio waves of very high voltage (RF nanosecond pulser generator) which can be used for research purposes in the field of medicine for the treatment of various types of skin diseases such as acne, infected chronic ulcers, eczema, psoriasis, accelerate wound healing, etc. This is achieved by accelerating the healing process of the tissues since the electromagnetic waves heal the membranes of the damaged cells. An alternative innovative medical application of the RF nanosecond pulser generator is that it can be used for, the treatment of tumors through the process of electroporation. This is the process by which the application of very high voltage radio pulses disrupts the lipid bilayer of the cell membrane resulting in the formation of irreversible nano-pores in the cell membrane of cancer cells, thereby activating the process of apoptosis. To achieve cell electroporation, high voltage pulses with different pulse widths in the range of a few nanoseconds to hundreds of microseconds are required. The nanosecond pulser generator is designed to output very high voltage pulses (0-1000) V in extremely short periods of time (30-370) nsec.
The electronic circuit can be broken down in 3 discrete system blocks:
(a) The circuit that produces the high output voltage.
(b) The RF pulse generator circuit, consisting of an integrated MOSFET circuit, which is the main building block of the electronic circuit, acting as a high frequency switch and the basic functionality of which is to apply the RF pulses to the load.
(c) Αn electronic circuit that controls the RF MOSFET switch and supplies it with electrical current in the form of a nanosecond pulse. The pulse may switch-on the high frequency MOSFET for an extremely short period of time so the output of the bipolar probe produces the final high voltage and short duration RF pulses that can be used further in several specialized technical and medical applications. |
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