VLSI fabrication principles : silicon and gallium arsenide
Αποθηκεύτηκε σε:
| Κύριος συγγραφέας: | |
|---|---|
| Μορφή: | Βιβλίο |
| Γλώσσα: | English |
| Δημοσίευση: |
New York :
Wiley,
c1983
|
| Θέματα: | |
| Ετικέτες: |
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| LEADER | 00000cam a2200000 i 4500 | ||
|---|---|---|---|
| 001 | 1/39568 | ||
| 008 | 971015s1983 eng d | ||
| 020 | |a 0471868337 | ||
| 035 | |l 10041042 | ||
| 035 | |a 1997 |c ΔΩΡΕΑ ΤΖΑΦΕΡΗ | ||
| 040 | |a GR-MY-UA |b gre |e aacr | ||
| 041 | 0 | |a eng | |
| 082 | 0 | |a 621.395 | |
| 100 | 1 | |a Ghandhi, Sorab Khushro |d 1928- | |
| 245 | 1 | 0 | |a VLSI fabrication principles : |b silicon and gallium arsenide / |c Sorab K. Ghandhi |
| 246 | 3 | 3 | |a V.L.S.I. fabrication principles |
| 260 | |a New York : |b Wiley, |c c1983 | ||
| 300 | |a xi, 665 p.; |b ill.; |c 24 cm. | ||
| 500 | |a "A Wiley-Interscience publication." | ||
| 500 | |a Includes bibliographical references and index | ||
| 650 | 0 | 0 | |a Integrated circuits |x Very large scale integration. |
| 650 | 0 | 0 | |a Silicon. |
| 650 | 0 | 0 | |a Gallium arsenide. |
| 852 | |a INST |b SAMOS |e 19971015 |h 621.395 GHA |p 005300008720 |q 005300008720 |t BK |y 0 | ||
| 901 | |a BIBL-1997-2 | ||
| 909 | |a Σ |b 050545 | ||