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Substrate-engineered high-Q quasi-BICs in asymmetric transition metal dichalcogenide metasurfaces

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Τίτλος: Substrate-engineered high-Q quasi-BICs in asymmetric transition metal dichalcogenide metasurfaces
Συγγραφείς: Danaeifar, MohammadAff1, IDs1108202608853w_cor1
Πηγή: Optical and Quantum Electronics. 58(7)
Βάση Δεδομένων: Springer Nature Journals
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  – Url: https://dx.doi.org/doi:10.1007/s11082-026-08853-w
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  Data: <i>Optical and Quantum Electronics</i>. 58(7)
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        Value: 10.1007/s11082-026-08853-w
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      – TitleFull: Substrate-engineered high-Q quasi-BICs in asymmetric transition metal dichalcogenide metasurfaces
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          Dates:
            – D: 01
              M: 07
              Type: published
              Y: 2026
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