Παραπομπή σε μορφή APA (7η εκδ.)

Danaeifar, M. (2026). Substrate-engineered high-Q quasi-BICs in asymmetric transition metal dichalcogenide metasurfaces. Optical and Quantum Electronics, 58(7), . https://doi.org/10.1007/s11082-026-08853-w

Παραπομπή σε μορφή Chicago (17η εκδ.)

Danaeifar, Mohammad. "Substrate-engineered High-Q Quasi-BICs in Asymmetric Transition Metal Dichalcogenide Metasurfaces." Optical and Quantum Electronics 58, no. 7 (2026). https://doi.org/10.1007/s11082-026-08853-w.

Παραπομπή σε μορφή MLA (9th εκδ.)

Danaeifar, Mohammad. "Substrate-engineered High-Q Quasi-BICs in Asymmetric Transition Metal Dichalcogenide Metasurfaces." Optical and Quantum Electronics, vol. 58, no. 7, 2026, https://doi.org/10.1007/s11082-026-08853-w.