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A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs

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Τίτλος: A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs
Συγγραφείς: Trentzsch, M., Flachowsky, S., Richter, R., Paul, J., Reimer, B., Utess, D., Jansen, S., Mulaosmanovic, H., Muller, S., Slesazeck, S., Ocker, J., Noack, M., Muller, J., Polakowski, P., Schreiter, J., Beyer, S., Mikolajick, T., Rice, B.
Πηγή: 2016 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2016 IEEE International. :11.5.1-11.5.4 Dec, 2016
Relation: 2016 IEEE International Electron Devices Meeting (IEDM)
Βάση Δεδομένων: IEEE Xplore Digital Library
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  Data: 2016 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2016 IEEE International. :11.5.1-11.5.4 Dec, 2016
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