Academic Journal
Low-Power a-Si:H Gate Driver Circuit With Threshold-Voltage-Shift Recovery and Synchronously Controlled Pull-Down Scheme
| Τίτλος: | Low-Power a-Si:H Gate Driver Circuit With Threshold-Voltage-Shift Recovery and Synchronously Controlled Pull-Down Scheme |
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| Συγγραφείς: | Lin, C., Cheng, M., Tu, C., Wu, C., Chen, F. |
| Πηγή: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 62(1):136-142 Jan, 2015 |
| Βάση Δεδομένων: | IEEE Xplore Digital Library |
| FullText | Links: – Type: other Text: Availability: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Low-Power a-Si:H Gate Driver Circuit With Threshold-Voltage-Shift Recovery and Synchronously Controlled Pull-Down Scheme – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Lin%2C+C%2E%22">Lin, C.</searchLink><br /><searchLink fieldCode="AR" term="%22Cheng%2C+M%2E%22">Cheng, M.</searchLink><br /><searchLink fieldCode="AR" term="%22Tu%2C+C%2E%22">Tu, C.</searchLink><br /><searchLink fieldCode="AR" term="%22Wu%2C+C%2E%22">Wu, C.</searchLink><br /><searchLink fieldCode="AR" term="%22Chen%2C+F%2E%22">Chen, F.</searchLink> – Name: TitleSource Label: Source Group: Src Data: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 62(1):136-142 Jan, 2015 |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=edseee&AN=edseee.6975051 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1109/TED.2014.2372820 PhysicalDescription: Pagination: PageCount: 1 StartPage: 136 Titles: – TitleFull: Low-Power a-Si:H Gate Driver Circuit With Threshold-Voltage-Shift Recovery and Synchronously Controlled Pull-Down Scheme Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Lin, C. – PersonEntity: Name: NameFull: Cheng, M. – PersonEntity: Name: NameFull: Tu, C. – PersonEntity: Name: NameFull: Wu, C. – PersonEntity: Name: NameFull: Chen, F. IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 01 Type: published Y: 2015 Identifiers: – Type: issn-print Value: 00189383 – Type: issn-print Value: 15579646 – Type: issn-locals Value: edseee.IEEEJournals Numbering: – Type: volume Value: 62 – Type: issue Value: 1 Titles: – TitleFull: IEEE Transactions on Electron Devices, Electron Devices, IEEE Transactions on, IEEE Trans. Electron Devices Type: main |
| ResultId | 1 |