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Simulation of a New Type of Oxide Confined 850 nm VCSEL

Bibliographic Details
Title: Simulation of a New Type of Oxide Confined 850 nm VCSEL
Authors: Mitani, S. M., Alias, M. S., Choudhury, P. K.
Source: TENCON 2006 - 2006 IEEE Region 10 Conference TENCON 2006. 2006 IEEE Region 10 Conference. :1-4 Nov, 2006
Relation: TENCON - 2006 IEEE Region 10 Conference
Database: IEEE Xplore Digital Library
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Header DbId: edseee
DbLabel: IEEE Xplore Digital Library
An: edseee.4142232
RelevancyScore: 931
AccessLevel: 2
PubType: Conference
PubTypeId: conference
PreciseRelevancyScore: 931.137329101563
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  Data: Simulation of a New Type of Oxide Confined 850 nm VCSEL
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  Data: <searchLink fieldCode="AR" term="%22Mitani%2C+S%2E+M%2E%22">Mitani, S. M.</searchLink><br /><searchLink fieldCode="AR" term="%22Alias%2C+M%2E+S%2E%22">Alias, M. S.</searchLink><br /><searchLink fieldCode="AR" term="%22Choudhury%2C+P%2E+K%2E%22">Choudhury, P. K.</searchLink>
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  Data: TENCON 2006 - 2006 IEEE Region 10 Conference TENCON 2006. 2006 IEEE Region 10 Conference. :1-4 Nov, 2006
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  Data: TENCON - 2006 IEEE Region 10 Conference
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      – Type: doi
        Value: 10.1109/TENCON.2006.344117
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        StartPage: 1
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      – TitleFull: Simulation of a New Type of Oxide Confined 850 nm VCSEL
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          Name:
            NameFull: Mitani, S. M.
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            NameFull: Alias, M. S.
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            NameFull: Choudhury, P. K.
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            – D: 01
              M: 11
              Type: published
              Y: 2006
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