Strain-Induced Metallic-to-Semiconductor Transition in Carbon Nanotube and Graphene Nanoribbon Transistors: A Tight-Binding Study

Λεπτομέρειες βιβλιογραφικής εγγραφής
Τίτλος: Strain-Induced Metallic-to-Semiconductor Transition in Carbon Nanotube and Graphene Nanoribbon Transistors: A Tight-Binding Study
Συγγραφείς: J, Venkatesan, R, Sathiya
Πηγή: 2026 7th International Conference on Electronics and Sustainable Communication Systems (ICESC) Electronics and Sustainable Communication Systems (ICESC), 2026 7th International Conference on. :360-366 Aug, 2026
Relation: 2026 7th International Conference on Electronics and Sustainable Communication Systems (ICESC)
Βάση Δεδομένων: IEEE Xplore Digital Library