J, V., & R, S. (2026). Strain-Induced Metallic-to-Semiconductor Transition in Carbon Nanotube and Graphene Nanoribbon Transistors: A Tight-Binding Study. 2026 7th International Conference on Electronics and Sustainable Communication Systems (ICESC), Electronics and Sustainable Communication Systems (ICESC), 2026 7th International Conference on, 360. https://doi.org/10.1109/ICESC70182.2026.11687165
Chicago Style (17th ed.) CitationJ, Venkatesan, and Sathiya R. "Strain-Induced Metallic-to-Semiconductor Transition in Carbon Nanotube and Graphene Nanoribbon Transistors: A Tight-Binding Study." 2026 7th International Conference on Electronics and Sustainable Communication Systems (ICESC), Electronics and Sustainable Communication Systems (ICESC), 2026 7th International Conference on 2026: 360. https://doi.org/10.1109/ICESC70182.2026.11687165.
MLA (9th ed.) CitationJ, Venkatesan, and Sathiya R. "Strain-Induced Metallic-to-Semiconductor Transition in Carbon Nanotube and Graphene Nanoribbon Transistors: A Tight-Binding Study." 2026 7th International Conference on Electronics and Sustainable Communication Systems (ICESC), Electronics and Sustainable Communication Systems (ICESC), 2026 7th International Conference on, 2026, p. 360, https://doi.org/10.1109/ICESC70182.2026.11687165.