Academic Journal
A 950 °C-Thermal-Budget-Compatible Al2O3-Embedded Hf0.5Zr0.5O2 Poly-Si Channel- Last FeFET for 3-D NAND Applications
| Title: | A 950 °C-Thermal-Budget-Compatible Al2O3-Embedded Hf0.5Zr0.5O2 Poly-Si Channel- Last FeFET for 3-D NAND Applications |
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| Authors: | Fan, W., Ke, X., Ding, Y., Shao, X., Dai, S., Hu, T., Han, R., Liao, M., Jia, X., Tian, F., Li, T., Tang, B., Chai, J., Xu, H., Luo, Q., Wang, X., Wang, W., Ye, T. |
| Source: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 73(9):5867-5871 Sep, 2026 |
| Database: | IEEE Xplore Digital Library |
| ISSN: | 00189383 15579646 |
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| DOI: | 10.1109/TED.2026.3717557 |