Academic Journal
1700-V Enhancement-Mode MIS-HEMTs With Fully Recessed-Gate on 6-in GaN-on-Si Wafer
| Τίτλος: | 1700-V Enhancement-Mode MIS-HEMTs With Fully Recessed-Gate on 6-in GaN-on-Si Wafer |
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| Συγγραφείς: | Lei, Y., Zuo, Q., Sun, N., Wang, X., Zhang, J., Dai, J., Han, R., Xia, X., Wang, R., Liang, H., Qiu, Y., Fu, D., Liang, Y.C., Huang, H. |
| Πηγή: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 73(10):5936-5943 Oct, 2026 |
| Βάση Δεδομένων: | IEEE Xplore Digital Library |
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