Academic Journal
Fully Phase-Change Artificial Neural Networks Based on Phase-Change Memory With Reconfigurable Activation Functions
| Τίτλος: | Fully Phase-Change Artificial Neural Networks Based on Phase-Change Memory With Reconfigurable Activation Functions |
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| Συγγραφείς: | Zhao, R., Chen, X., Chen, H., Shu, H., Xu, W., Zhang, S., Li, X., Wang, T., Tong, H., Miao, X. |
| Πηγή: | IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 47(10):2043-2046 Oct, 2026 |
| Βάση Δεδομένων: | IEEE Xplore Digital Library |
| FullText | Links: – Type: other Text: Availability: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Fully Phase-Change Artificial Neural Networks Based on Phase-Change Memory With Reconfigurable Activation Functions – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Zhao%2C+R%2E%22">Zhao, R.</searchLink><br /><searchLink fieldCode="AR" term="%22Chen%2C+X%2E%22">Chen, X.</searchLink><br /><searchLink fieldCode="AR" term="%22Chen%2C+H%2E%22">Chen, H.</searchLink><br /><searchLink fieldCode="AR" term="%22Shu%2C+H%2E%22">Shu, H.</searchLink><br /><searchLink fieldCode="AR" term="%22Xu%2C+W%2E%22">Xu, W.</searchLink><br /><searchLink fieldCode="AR" term="%22Zhang%2C+S%2E%22">Zhang, S.</searchLink><br /><searchLink fieldCode="AR" term="%22Li%2C+X%2E%22">Li, X.</searchLink><br /><searchLink fieldCode="AR" term="%22Wang%2C+T%2E%22">Wang, T.</searchLink><br /><searchLink fieldCode="AR" term="%22Tong%2C+H%2E%22">Tong, H.</searchLink><br /><searchLink fieldCode="AR" term="%22Miao%2C+X%2E%22">Miao, X.</searchLink> – Name: TitleSource Label: Source Group: Src Data: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 47(10):2043-2046 Oct, 2026 |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=edseee&AN=edseee.11655861 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1109/LED.2026.3722897 PhysicalDescription: Pagination: PageCount: 4 StartPage: 2043 Titles: – TitleFull: Fully Phase-Change Artificial Neural Networks Based on Phase-Change Memory With Reconfigurable Activation Functions Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Zhao, R. – PersonEntity: Name: NameFull: Chen, X. – PersonEntity: Name: NameFull: Chen, H. – PersonEntity: Name: NameFull: Shu, H. – PersonEntity: Name: NameFull: Xu, W. – PersonEntity: Name: NameFull: Zhang, S. – PersonEntity: Name: NameFull: Li, X. – PersonEntity: Name: NameFull: Wang, T. – PersonEntity: Name: NameFull: Tong, H. – PersonEntity: Name: NameFull: Miao, X. IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 10 Type: published Y: 2026 Identifiers: – Type: issn-print Value: 07413106 – Type: issn-print Value: 15580563 – Type: issn-locals Value: edseee.IEEEJournals Numbering: – Type: volume Value: 47 – Type: issue Value: 10 Titles: – TitleFull: IEEE Electron Device Letters, Electron Device Letters, IEEE, IEEE Electron Device Lett. Type: main |
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