AlBassam, B., & Alghamdi, A. (2026). S-Band High Power and Highly Efficient Balanced Class-AB Amplifier Design Using GaN Un-Matched HEMT. 2026 ICEENG International Conference for Innovations in Electronics, EM-Waves, and Communications (IEEC), Innovations in Electronics, EM-Waves, and Communications (IEEC), 2026 ICEENG International Conference for, 1. https://doi.org/10.1109/IEEC69628.2026.11583949
Παραπομπή σε μορφή Chicago (17η εκδ.)AlBassam, Bassam, και Abdulrahman Alghamdi. "S-Band High Power and Highly Efficient Balanced Class-AB Amplifier Design Using GaN Un-Matched HEMT." 2026 ICEENG International Conference for Innovations in Electronics, EM-Waves, and Communications (IEEC), Innovations in Electronics, EM-Waves, and Communications (IEEC), 2026 ICEENG International Conference for 2026: 1. https://doi.org/10.1109/IEEC69628.2026.11583949.
Παραπομπή σε μορφή MLA (9th εκδ.)AlBassam, Bassam, και Abdulrahman Alghamdi. "S-Band High Power and Highly Efficient Balanced Class-AB Amplifier Design Using GaN Un-Matched HEMT." 2026 ICEENG International Conference for Innovations in Electronics, EM-Waves, and Communications (IEEC), Innovations in Electronics, EM-Waves, and Communications (IEEC), 2026 ICEENG International Conference for, 2026, p. 1, https://doi.org/10.1109/IEEC69628.2026.11583949.