APA (7th ed.) Citation

Panarella, L., Tyaginov, S., Smets, Q., Kaczer, B., Schram, T., Cott, D., . . . Afanas'Ev, V. (2026). High-k scaling for reliability enhancement in 300-mm-integrated WS2 FETs. 2026 10th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), Electron Devices Technology & Manufacturing Conference (EDTM), 2026 10th IEEE, 1. https://doi.org/10.1109/EDTM65772.2026.11497294

Chicago Style (17th ed.) Citation

Panarella, Luca, Stanislav Tyaginov, Quentin Smets, Ben Kaczer, Tom Schram, Daire Cott, Cesar Javier Lockhart De La Rosa, Gouri Sankar Kar, and Valeri Afanas'Ev. "High-k Scaling for Reliability Enhancement in 300-mm-integrated WS2 FETs." 2026 10th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), Electron Devices Technology & Manufacturing Conference (EDTM), 2026 10th IEEE 2026: 1. https://doi.org/10.1109/EDTM65772.2026.11497294.

MLA (9th ed.) Citation

Panarella, Luca, et al. "High-k Scaling for Reliability Enhancement in 300-mm-integrated WS2 FETs." 2026 10th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), Electron Devices Technology & Manufacturing Conference (EDTM), 2026 10th IEEE, 2026, p. 1, https://doi.org/10.1109/EDTM65772.2026.11497294.