Huo, R., Zhang, T., Jie, W., Zheng, Y., Li, D., Zhang, Y., . . . Wang, H. (2026). A 1.8-to-3.0-GHz Fully Integrated All-in-One CMOS Frequency Management Module Achieving −47-/+42-ppm Inaccuracy From −40 ∘C to 95 ∘C and −150/+70 ppm After Accelerated Aging. IEEE Journal of Solid-State Circuits, Solid-State Circuits, IEEE Journal of, IEEE J. Solid-State Circuits, 61(9), 4649-4663. https://doi.org/10.1109/JSSC.2026.3677418
Παραπομπή σε μορφή Chicago (17η εκδ.)Huo, R., et al. "A 1.8-to-3.0-GHz Fully Integrated All-in-One CMOS Frequency Management Module Achieving −47-/+42-ppm Inaccuracy From −40 ∘C to 95 ∘C and −150/+70 Ppm After Accelerated Aging." IEEE Journal of Solid-State Circuits, Solid-State Circuits, IEEE Journal of, IEEE J. Solid-State Circuits 61, no. 9 (2026): 4649-4663. https://doi.org/10.1109/JSSC.2026.3677418.
Παραπομπή σε μορφή MLA (9th εκδ.)Huo, R., et al. "A 1.8-to-3.0-GHz Fully Integrated All-in-One CMOS Frequency Management Module Achieving −47-/+42-ppm Inaccuracy From −40 ∘C to 95 ∘C and −150/+70 Ppm After Accelerated Aging." IEEE Journal of Solid-State Circuits, Solid-State Circuits, IEEE Journal of, IEEE J. Solid-State Circuits, vol. 61, no. 9, 2026, pp. 4649-4663, https://doi.org/10.1109/JSSC.2026.3677418.