Prediction of Trap Behavior Under Repetitive Short-Circuit Stress in Sic MOSFETs Using Physics-Informed Gaussian Process Regressions

Λεπτομέρειες βιβλιογραφικής εγγραφής
Τίτλος: Prediction of Trap Behavior Under Repetitive Short-Circuit Stress in Sic MOSFETs Using Physics-Informed Gaussian Process Regressions
Συγγραφείς: Seo, Hyeona, Kim, Geon, Kim, Dongyeong, Kim, Suyeon, Park, Jewon, Kim, Shinwook, Kang, Ryun, Kim, Sowon, Lim, Chaehyuk, Yun, Jeonghyeon, Lee, Juwon, Lee, Hyerin, Choi, Ujin, Kim, Eojin, Jeong, Minwoo, Lee, Myoungjin
Πηγή: 2026 International Conference on Artificial Intelligence in Information and Communication (ICAIIC) Artificial Intelligence in Information and Communication (ICAIIC), 2026 International Conference on. :019-021 Feb, 2026
Relation: 2026 International Conference on Artificial Intelligence in Information and Communication (ICAIIC)
Βάση Δεδομένων: IEEE Xplore Digital Library