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Next-Generation Semiconductor Photovoltaic Device Featuring Dual Absorber Layers in a Halide-Chalcogenide/Inorganic Hybrid Design

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Τίτλος: Next-Generation Semiconductor Photovoltaic Device Featuring Dual Absorber Layers in a Halide-Chalcogenide/Inorganic Hybrid Design
Συγγραφείς: Venkateswarlu, G, Nanda, Umakanta, Sreeram, Mounika, Chaturvedi, C.V.M.
Πηγή: 2025 5th IEEE International Conference on Applied Electromagnetics, Signal Processing, & Communication (AESPC) Applied Electromagnetics, Signal Processing, & Communication (AESPC), 2025 5th IEEE International Conference on. :1-5 Dec, 2025
Relation: 2025 5th IEEE International Conference on Applied Electromagnetics, Signal Processing, & Communication (AESPC)
Βάση Δεδομένων: IEEE Xplore Digital Library
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        Value: 10.1109/AESPC67542.2025.11326759
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