Academic Journal

High-Resistivity Substrates in 22-nm FD-SOI—Part I: Wideband Modeling and Impact on RF Losses

Λεπτομέρειες βιβλιογραφικής εγγραφής
Τίτλος: High-Resistivity Substrates in 22-nm FD-SOI—Part I: Wideband Modeling and Impact on RF Losses
Συγγραφείς: Rack, M., Lederer, D., Raskin, J.
Πηγή: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 72(9):5229-5235 Sep, 2025
Βάση Δεδομένων: IEEE Xplore Digital Library
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  Data: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 72(9):5229-5235 Sep, 2025
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        Value: 10.1109/TED.2025.3594268
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