Rack, M., Lederer, D., & Raskin, J. (2025). High-Resistivity Substrates in 22-nm FD-SOI—Part I: Wideband Modeling and Impact on RF Losses. IEEE Transactions on Electron Devices, Electron Devices, IEEE Transactions on, IEEE Trans. Electron Devices, 72(9), 5229. https://doi.org/10.1109/TED.2025.3594268
Παραπομπή σε μορφή Chicago (17η εκδ.)Rack, M., D. Lederer, και J. Raskin. "High-Resistivity Substrates in 22-nm FD-SOI—Part I: Wideband Modeling and Impact on RF Losses." IEEE Transactions on Electron Devices, Electron Devices, IEEE Transactions on, IEEE Trans. Electron Devices 72, no. 9 (2025): 5229. https://doi.org/10.1109/TED.2025.3594268.
Παραπομπή σε μορφή MLA (9th εκδ.)Rack, M., et al. "High-Resistivity Substrates in 22-nm FD-SOI—Part I: Wideband Modeling and Impact on RF Losses." IEEE Transactions on Electron Devices, Electron Devices, IEEE Transactions on, IEEE Trans. Electron Devices, vol. 72, no. 9, 2025, p. 5229, https://doi.org/10.1109/TED.2025.3594268.