Academic Journal
Modeling of Doped Fully Depleted Behavior Induced by Total Ionizing Dose in Voltage Reference Circuits From a 65-nm Partially Depleted SOI Technology
| Title: | Modeling of Doped Fully Depleted Behavior Induced by Total Ionizing Dose in Voltage Reference Circuits From a 65-nm Partially Depleted SOI Technology |
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| Authors: | Lomonaco, J., Rostand, N., Martinie, S., Charbonnier, G., Marcandella, C., Bedecarrats, T., Bournel, A. |
| Source: | IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 72(4):1276-1284 Apr, 2025 |
| Database: | IEEE Xplore Digital Library |
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