Modeling of Doped Fully Depleted Behavior Induced by Total Ionizing Dose in Voltage Reference Circuits From a 65-nm Partially Depleted SOI Technology - Lomonaco, J.; Rostand, N.; Martinie, S.; Charbonnier, G.; Marcandella, C.; Bedecarrats, T.; Bournel, A. (IEEE Transactions on Nuclear Science, Nuclear Science, IEEE Transactions on, IEEE Trans. Nucl. Sci., 2025)