Academic Journal
Modeling of Doped Fully Depleted Behavior Induced by Total Ionizing Dose in Voltage Reference Circuits From a 65-nm Partially Depleted SOI Technology
| Τίτλος: | Modeling of Doped Fully Depleted Behavior Induced by Total Ionizing Dose in Voltage Reference Circuits From a 65-nm Partially Depleted SOI Technology |
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| Συγγραφείς: | Lomonaco, J., Rostand, N., Martinie, S., Charbonnier, G., Marcandella, C., Bedecarrats, T., Bournel, A. |
| Πηγή: | IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 72(4):1276-1284 Apr, 2025 |
| Βάση Δεδομένων: | IEEE Xplore Digital Library |
| FullText | Links: – Type: other Text: Availability: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Modeling of Doped Fully Depleted Behavior Induced by Total Ionizing Dose in Voltage Reference Circuits From a 65-nm Partially Depleted SOI Technology – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Lomonaco%2C+J%2E%22">Lomonaco, J.</searchLink><br /><searchLink fieldCode="AR" term="%22Rostand%2C+N%2E%22">Rostand, N.</searchLink><br /><searchLink fieldCode="AR" term="%22Martinie%2C+S%2E%22">Martinie, S.</searchLink><br /><searchLink fieldCode="AR" term="%22Charbonnier%2C+G%2E%22">Charbonnier, G.</searchLink><br /><searchLink fieldCode="AR" term="%22Marcandella%2C+C%2E%22">Marcandella, C.</searchLink><br /><searchLink fieldCode="AR" term="%22Bedecarrats%2C+T%2E%22">Bedecarrats, T.</searchLink><br /><searchLink fieldCode="AR" term="%22Bournel%2C+A%2E%22">Bournel, A.</searchLink> – Name: TitleSource Label: Source Group: Src Data: IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 72(4):1276-1284 Apr, 2025 |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=edseee&AN=edseee.10845802 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1109/TNS.2025.3531687 PhysicalDescription: Pagination: PageCount: 9 StartPage: 1276 Titles: – TitleFull: Modeling of Doped Fully Depleted Behavior Induced by Total Ionizing Dose in Voltage Reference Circuits From a 65-nm Partially Depleted SOI Technology Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Lomonaco, J. – PersonEntity: Name: NameFull: Rostand, N. – PersonEntity: Name: NameFull: Martinie, S. – PersonEntity: Name: NameFull: Charbonnier, G. – PersonEntity: Name: NameFull: Marcandella, C. – PersonEntity: Name: NameFull: Bedecarrats, T. – PersonEntity: Name: NameFull: Bournel, A. IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 04 Type: published Y: 2025 Identifiers: – Type: issn-print Value: 00189499 – Type: issn-print Value: 15581578 – Type: issn-locals Value: edseee.IEEEJournals Numbering: – Type: volume Value: 72 – Type: issue Value: 4 Titles: – TitleFull: IEEE Transactions on Nuclear Science, Nuclear Science, IEEE Transactions on, IEEE Trans. Nucl. Sci. Type: main |
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