Academic Journal
Modeling of Doped Fully Depleted Behavior Induced by Total Ionizing Dose in Voltage Reference Circuits From a 65-nm Partially Depleted SOI Technology
| Τίτλος: | Modeling of Doped Fully Depleted Behavior Induced by Total Ionizing Dose in Voltage Reference Circuits From a 65-nm Partially Depleted SOI Technology |
|---|---|
| Συγγραφείς: | Lomonaco, J., Rostand, N., Martinie, S., Charbonnier, G., Marcandella, C., Bedecarrats, T., Bournel, A. |
| Πηγή: | IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 72(4):1276-1284 Apr, 2025 |
| Βάση Δεδομένων: | IEEE Xplore Digital Library |
| ISSN: | 00189499 15581578 |
|---|---|
| DOI: | 10.1109/TNS.2025.3531687 |