APA (7th ed.) Citation

Lomonaco, J., Rostand, N., Martinie, S., Charbonnier, G., Marcandella, C., Bedecarrats, T., & Bournel, A. (2025). Modeling of Doped Fully Depleted Behavior Induced by Total Ionizing Dose in Voltage Reference Circuits From a 65-nm Partially Depleted SOI Technology. IEEE Transactions on Nuclear Science, Nuclear Science, IEEE Transactions on, IEEE Trans. Nucl. Sci., 72(4), 1276. https://doi.org/10.1109/TNS.2025.3531687

Chicago Style (17th ed.) Citation

Lomonaco, J., N. Rostand, S. Martinie, G. Charbonnier, C. Marcandella, T. Bedecarrats, and A. Bournel. "Modeling of Doped Fully Depleted Behavior Induced by Total Ionizing Dose in Voltage Reference Circuits From a 65-nm Partially Depleted SOI Technology." IEEE Transactions on Nuclear Science, Nuclear Science, IEEE Transactions on, IEEE Trans. Nucl. Sci. 72, no. 4 (2025): 1276. https://doi.org/10.1109/TNS.2025.3531687.

MLA (9th ed.) Citation

Lomonaco, J., et al. "Modeling of Doped Fully Depleted Behavior Induced by Total Ionizing Dose in Voltage Reference Circuits From a 65-nm Partially Depleted SOI Technology." IEEE Transactions on Nuclear Science, Nuclear Science, IEEE Transactions on, IEEE Trans. Nucl. Sci., vol. 72, no. 4, 2025, p. 1276, https://doi.org/10.1109/TNS.2025.3531687.